MWT-9F

Overview

The MWT-9F is an 18 GHz medium power GaAs FET featuring a nominal 0.25 micron gate length and 750 micron gate width. It delivers 26.5 dBm output power and 11 dB small signal gain at 12 GHz. The device utilizes refractory metal/gold gates and SiN passivation. Chip dimensions are 485 x 315 microns with a thickness of 100 microns. It supports chip and three package types.

Feature Summary

• Utilizes 0.25 micron refractory metal/gold gate technology
• Features silicon nitride (SiN) passivation for durability
• Designed for medium linear power applications

Applications

• Commercial amplifier driver stages
• Military broad-band amplifiers
• Hi-Rel space applications

Procurement Notes

Verify the specific package type required, as the MWT-9F is available in multiple configurations including the MwT-9F70, MwT-9F71, and MwT-9F73 packages. Confirm that the selected variant meets the mechanical and electrical requirements for the intended application environment before finalizing procurement.

Selection Notes

Select this component for designs requiring medium linear power at frequencies up to 18 GHz. Ensure the circuit design accommodates the specific DC operating conditions and impedance matching networks necessary to achieve the specified gain and output power levels at the target frequency.

Part Context

The MWT-9F belongs to the MwT series of GaAs FETs manufactured by CML Microsystems. These devices are engineered for high-frequency performance in demanding environments. The series includes various models optimized for different power and frequency ranges within the microwave spectrum.

Replacement Considerations

MwT-9F70, MwT-9F71, MwT-9F73