MWT-PH27F

$13.63

Description：RF MOSFET PHEMT FET 3V CHIP
Series：-

SKU:a03e876a79ec Category: RF FETs, MOSFETs Brand: CML Micro

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Product introduction

Product Detailed Parameters

Description：RF MOSFET PHEMT FET 3V CHIP
Series：-
Mfr：CML Micro
Package：Case
Technology：pHEMT FET
Frequency：26GHz
Gain：14dB
Voltage - Test：3 V
Current Rating (Amps)：120mA
Noise Figure：-
Current - Test：1 mA
Power - Output：25dBm
Voltage - Rated：-
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Chip
Configuration：-

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MWT-PH27F

Overview

The MWT-PH27F is a 26 GHz medium power AlGaAs/InGaAs pHEMT device featuring a nominal 0.25 micron gate length and 400 micron gate width. It delivers 25 dBm output power, 14 dB small signal gain, and 45% PAE at 18 GHz. The chip measures 340 x 360 microns with a thickness of 100 microns.

Feature Summary

Utilizes reliable metal systems and passivation for excellent reliability
Suitable for wideband applications such as 6 to 18 GHz ranges
Capable of narrow-band operations within the specified frequency range

Applications

Commercial applications
Military applications
Hi-Rel Space applications

Procurement Notes

Verify specific packaging requirements against official documentation before procurement. Confirm that absolute maximum ratings are not exceeded during continuous operation to maintain design goals. Ensure proper handling procedures are followed for the bare die component to prevent damage.

Selection Notes

Select this component for designs requiring high-gain and medium power performance up to 26 GHz. Evaluate suitability for both wideband and narrow-band configurations based on specific system bandwidth requirements and efficiency targets.

Part Context

This device belongs to the MwT series of pseudomorphic-high-electron-mobility transistors manufactured by CML Microsystems Plc. It is designed for RF applications utilizing AlGaAs/InGaAs technology to provide robust performance in demanding environments.