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The MWT-PH32F is a 12 GHz AlGaAs/InGaAs pHEMT device featuring a nominal 0.25 micron gate length and 1600 micron gate width. It delivers 30.5 dBm output power, 13 dB small signal gain, and 43% power added efficiency at 12 GHz. The chip measures 530 x 375 microns with a thickness of 100 microns.
Verify the specific package suffix (e.g., MwT-PH32F70, MwT-PH32F71, MwT-PH32F73) required for your assembly process before ordering. Confirm that the absolute maximum ratings are not exceeded in continuous operation to maintain design goals for mean-time-to-failure. Ensure compatibility with the bare die format during integration.
Select this component when high power and high power added efficiency are critical requirements up to 12.0 GHz. The 1600 micron gate width provides significant current handling capability compared to narrower devices. Consider its suitability for both wideband and narrow-band designs based on system impedance matching needs.
This part belongs to the MwT series of microwave transistors manufactured by CML Microsystems Plc. It represents a pseudomorphic-high-electron-mobility-transistor technology optimized for millimeter-wave frequencies. The device is produced using refractory metal/gold gate structures to ensure robust performance in demanding environments.
Check datasheets for alternative pHEMTs with similar gate widths and frequency ranges. Verify if other packages like MwT-PH32F70 or MwT-PH32F71 offer identical electrical characteristics with different mounting configurations.