MWT-PH7F

Overview

The MWT-PH7F is a 28 GHz medium power AlGaAs/InGaAs pHEMT transistor featuring a nominal 0.25 micron gate length and 250 micron gate width. It delivers 24.5 dBm output power and 15 dB typical small signal gain at 18 GHz, with 45% typical PAE. The chip measures 365 x 260 microns with a thickness of 100 microns.

Feature Summary

• Utilizes AlGaAs/InGaAs pHEMT technology for high-gain and medium power performance up to 28 GHz.
• Features excellent reliability through reliable metal systems and passivation processes.
• Suitable for both wideband applications (e.g., 6 to 18 GHz) and narrow-band designs.

Applications

• High gain amplifier circuits
• High power added efficiency amplifiers
• Commercial RF systems
• Military communication equipment
• Hi-Rel space applications

Procurement Notes

Verify the specific package suffix (70, 71, or 73) required for your assembly process, as the base die is available in multiple packaging configurations. Confirm that the operating temperature range aligns with your system requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring medium power output near 28 GHz with high gain characteristics. Ensure biasing networks support the dual or self-bias options provided in the datasheet diagrams to optimize performance for either wideband or narrow-band operational frequencies.

Part Context

This device belongs to CML Micro's MwT series of microwave transistors. It is specifically engineered for X-band and Ku-band applications where compact size and high reliability are critical. The pHEMT construction allows for efficient operation in demanding commercial and military environments.

Replacement Considerations

Check for updated package variants such as MWT-PH7F70, MWT-PH7F71, or MWT-PH7F73 which contain the same die but differ in handling and mounting specifications. No direct cross-brand substitutes are officially confirmed in the source material.