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Product Detailed Parameters
- Description：JFET N-CH 40V TO18
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：15 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：16pF @ 20V
- Resistance - RDS(On)：50 Ohms
- Power - Max：360 mW
- Operating Temperature：-65°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-206AA, TO-18-3 Metal Can
- Supplier Device Package：TO-18 (TO-206AA)
- Grade：Military
- Qualification：MIL-PRF-19500/431
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Overview
The MX2N4092 is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. Key electrical characteristics include a zero-gate-voltage drain current of 15 mA, a continuous drain current of -100 pA, and a drain-source on-resistance of 50 Ohms. Power dissipation is rated at 360 mW, with an operating temperature range spanning from -65 C to +175 C.
Feature Summary
- Single N-channel JFET configuration utilizing silicon technology
- Metal can construction in a TO-18-3 package for through-hole installation
- High-temperature operational capability extending up to +175 C
Applications
- Military electronic systems requiring high reliability
- Spacecraft avionics and satellite communication equipment
- Harsh environment industrial instrumentation
Procurement Notes
Verify the specific revision level and lot traceability documentation upon order confirmation. Confirm that the TO-18-3 metal can package meets the mechanical requirements of the target assembly. Ensure that the non-RoHS status aligns with the regulatory framework of the final product deployment region. Validate the 36-week production cycle against project timelines.
Selection Notes
Select this component when a ruggedized N-channel JFET with a 40 V breakdown rating is required for extreme thermal environments. The TO-18-3 metal package provides superior thermal management compared to plastic alternatives. Consider the 15 mA Idss specification for biasing requirements in analog signal processing circuits where low noise and high stability are critical.
Part Context
This part belongs to the military-grade JFET family produced by Microchip Technology. It shares the TO-18-3 form factor with other variants in the series but differs in specific electrical parameters such as Idss and Rds(on). The component is designed for applications demanding long-term reliability under severe environmental stress conditions.
Replacement Considerations
Cross-reference with MV2N4092 or 2N4092 only if pinout compatibility and electrical parameter tolerances are verified against the original design specifications.
