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Product Detailed Parameters
- Description：JFET N-CH
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The MX2N4392UB is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18-3 metal can package designed for through-hole mounting. The device features an N-channel configuration with a single internal transistor structure. Key electrical characteristics include a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. The maximum power dissipation is rated at 360 mW, supporting operation within a temperature range from -65°C to +175°C.
Feature Summary
- Utilizes silicon technology for robust performance in demanding environments.
- Features a hermetically sealed TO-18-3 metal can package suitable for high-reliability applications.
- Designed for through-hole installation to ensure secure mechanical attachment.
Applications
- Low-noise analog signal amplification
- High-impedance input stages in electronic circuits
- Precision current source implementations
Procurement Notes
Verify the specific ordering suffix against official Microchip documentation to confirm exact binning or testing criteria. Confirm that the TO-18-3 package dimensions align with the target PCB footprint. Ensure thermal management strategies accommodate the specified power dissipation limits under expected operating conditions.
Selection Notes
Select this component when a ruggedized, hermetically sealed JFET is required for high-temperature stability. The TO-18-3 package offers superior environmental protection compared to plastic equivalents. Consider the 40 V breakdown rating and low leakage characteristics for sensitive analog front-end designs requiring high reliability.
Part Context
This part belongs to the Microchip JFET product line, specifically engineered for military and aerospace-grade applications. The MX2N series provides matched pairs or individual transistors with tight parameter tolerances. These devices are characterized for extended temperature ranges and radiation hardness, distinguishing them from commercial-grade alternatives.
Replacement Considerations
Consult official cross-reference guides for verified substitutes. Generic JFETs may lack the hermetic sealing and extended temperature ratings of the MX2N4392UB. Verify pinout compatibility and electrical parameters before substitution.
