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The MX2N4393 is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a TO-18-3 metal can package designed for through-hole mounting. The device operates with a single configuration and supports a continuous drain current of up to 100 pA. It features a drain-source breakdown voltage of 40 V and a gate-source breakdown voltage of -40 V. The component dissipates 360 mW of power and maintains a maximum on-resistance of 80 Ohms. It functions within a temperature range from -65°C to +175°C.
Verify the specific suffix designation when ordering, as it may indicate variations in packaging or testing standards. Confirm RoHS compliance status prior to integration, as this variant may not meet current environmental directives. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the silicon components.
Select the MX2N4393 for designs requiring high-voltage handling and stable operation at elevated temperatures. The TO-18-3 package necessitates through-hole PCB layouts. Evaluate the 360 mW power dissipation limit against thermal management requirements. Consider the -40 V gate-source breakdown when designing biasing networks to prevent device damage during transient events.
This component belongs to the 2N4393 family of N-channel JFETs produced by Microchip Technology. It serves as a specialized discrete semiconductor device for analog and switching applications. The MX prefix typically denotes a specific manufacturing or quality tier within the broader product line, maintaining compatibility with standard JEDEC electrical characteristics for the base 2N4393 specification.
Direct substitutes include the MV2N4393 and generic 2N4393 equivalents. Verify pinout compatibility and thermal resistance specifications before substitution. Ensure replacement parts match the TO-18-3 package dimensions for mechanical fit.