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The MX2N4856UB/TR is an N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is designed for surface-mount applications in a compact SMD-3 package. The device supports a drain-source voltage of 40 V and a gate-source breakdown voltage of 40 V. Key electrical characteristics include a maximum power dissipation of 360 mW, a continuous drain current of 175 mA at 15 V, and an on-resistance of 25 Ohms. It operates within a temperature range of -65°C to +200°C junction temperature.
Verify the specific suffix UB/TR against official Microchip documentation to confirm the tape-and-reel packaging configuration and RoHS3 compliance status. Ensure that the ordering information matches the exact part number MX2N4856UB/TR to avoid discrepancies in package type or environmental certification during procurement.
Select this component when a ruggedized JFET is required for high-temperature environments up to 200°C. The SMD-3 package facilitates automated surface-mount placement. Verify that the 40V breakdown voltage and 175mA current ratings align with the circuit requirements before finalizing the design.
This part belongs to the 2N4856 series of N-channel JFETs produced by Microchip Technology. The series includes through-hole variants such as the 2N4856 and MX2N4856, which share similar electrical specifications but differ in physical mounting style. The MX2N4856UB/TR specifically adapts these characteristics for modern surface-mount manufacturing processes.
Direct replacements include the MX2N4856 for through-hole applications or other 2N4856-series devices from Microchip. Verify pinout compatibility and package dimensions when substituting with equivalent parts from other manufacturers.