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The MX2N4857UB/TR is an N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It operates in depletion mode with a single configuration. The device features a Drain-Source Breakdown Voltage of 40 V and a Gate-Source Breakdown Voltage of -40 V. Continuous drain current is rated at 360 mA, while the drain-source on-resistance is specified at 40 Ohms. Power dissipation reaches 360 mW. The component supports a wide operating temperature range from -65°C to +200°C and utilizes an SMD/SMT LCC-3 package.
Verify the specific datasheet version for the MX2N4857UB/TR, as official documentation may reference the broader 2N4856-2N4861 family specifications. Confirm that the LCC-3 surface-mount package aligns with your PCB footprint requirements. Ensure compliance with MIL-PRF-19500/385 standards if applicable to your project's reliability criteria before finalizing procurement.
Select this component when high-temperature stability and low on-resistance are required in a compact surface-mount format. Compare against through-hole TO-18 variants like the MX2N4857UB if board space permits. Verify that the 40V breakdown voltage meets circuit constraints. Consider the LCC-3 package compatibility during layout design to ensure proper thermal and electrical connections.
This part belongs to the Microchip 2N4856-2N4861 series of N-channel JFETs. These devices are designed for high-reliability applications, often adhering to military specifications such as MIL-PRF-19500/385. The series offers various breakdown voltage options ranging from 30V to 40V, with the MX2N4857UB/TR specifically providing 40V capability in a modern surface-mount package.
Publicly confirmed substitute part numbers for the MX2N4857UB/TR were not identified in the provided source material.