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The MX2N4857UB is an N-channel silicon small-signal Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes a TO-18 metal can package and operates in depletion mode. Key electrical characteristics include a drain-source breakdown voltage of 40 V, a gate-source breakdown voltage of -40 V, and a maximum drain current of 50 mA. The device supports a power dissipation of 1.8 W at 25°C case temperature and functions within an ambient temperature range of -65°C to +200°C.
Verify the specific suffix 'UB' against the official Microchip datasheet to confirm package type and testing standards. Ensure compliance with RoHS directives if required by the end application. Confirm that the TO-18 through-hole mounting style matches the design constraints. Validate that the operating temperature range meets system requirements.
Select this component when a ruggedized, hermetically sealed JFET is required for harsh environments. The TO-18 package provides superior thermal performance compared to plastic packages. Consider the 40V breakdown rating for moderate voltage swings. Verify that the depletion mode operation aligns with the circuit biasing strategy.
This part belongs to the 2N485x series of N-channel JFETs, which are equivalent to MIL-PRF-19500/385 devices. The 'MX' prefix typically denotes JANTX qualification levels. These transistors are designed for military and aerospace applications requiring high reliability and stable electrical characteristics over wide temperature ranges.
Direct equivalents include the 2N4857 and MX2N4857. Cross-reference with other manufacturers offering TO-18 packaged N-channel JFETs with similar 40V ratings. Verify pinout compatibility before substitution.