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The MX2N4860UB/TR is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. Constructed using silicon technology, this component is designed for surface-mount installation in the SMD-3 package configuration. It features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. The device supports a continuous drain current of 175 mA with an on-resistance of 25 Ohms at zero gate-source voltage. Thermal performance includes a power dissipation rating of 1.8 W, operating reliably within a temperature range from -65 C to +200 C.
Verify the specific suffix /TR indicates tape-and-reel packaging when sourcing. Confirm that the SMD-3 package matches your PCB footprint requirements. Ensure the manufacturer is identified as Microchip Technology to avoid counterfeit components. Cross-reference the datasheet for absolute maximum ratings before integration into high-voltage designs.
Select this component for designs requiring a single N-channel JFET with high-temperature capability. The 175 mA drain current suits moderate signal processing tasks. Consider the 25 Ohm on-resistance for impedance-sensitive analog paths. Verify compatibility with automated surface-mount assembly processes due to the reel packaging format.
This part belongs to the Microchip JFET family, specifically engineered for precision analog applications. It complements through-hole variants like the MX2N4858UB by offering a compact surface-mount alternative. The series provides consistent electrical parameters across different packaging styles, allowing design flexibility while maintaining standardized performance profiles for RF and audio stages.
The MQ2N4859UB/TR serves as a functional substitute within the same product line. Both devices share identical 30 V breakdown voltages and similar 1.8 W power dissipation ratings. Designers should verify pinout compatibility between the SMD-3 packages before swapping these components in existing layouts.