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The MX2N5116UB is a P-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in a UB-4 surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 30 V, a gate-source breakdown voltage of 30 V, and a gate-source cutoff voltage of 6 V. The device features a maximum power dissipation of 500 mW and an on-resistance of 100 Ohms at zero gate-source voltage. It operates within a temperature range of -65°C to +200°C.
Verify the specific ordering suffix against official Microchip documentation to confirm package type and screening level. Ensure compatibility with UB-4 footprint requirements during PCB layout. Confirm RoHS compliance status if required for commercial production, as military equivalents may differ. Cross-reference datasheet parameters with system constraints before finalizing procurement decisions.
Select this component when a P-channel JFET with a 30 V breakdown rating and 500 mW power dissipation is required. The UB-4 package suits designs needing low-profile surface mount integration. Consider the extended operating temperature range up to 200°C for harsh environments. Verify that the 100 Ohm on-resistance meets circuit impedance requirements.
This part belongs to the 2N5114 through 2N5116 series of small signal field-effect transistors. It serves as the surface mount variant of legacy leaded TO-18 packages. The series provides P-channel junction FET functionality for analog signal processing. Microchip Technology offers both commercial and screened versions for diverse reliability needs.
Direct replacements include the MQ2N5116UB and MV2N5115UB from Microchip Technology. These parts share similar P-channel JFET characteristics and surface mount packaging options. Verify pinout compatibility and specific electrical tolerances before substitution.