SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MZ0912B50Y is an NPN RF power bipolar transistor manufactured by Ampleon USA Inc. It features a collector-emitter breakdown voltage of 20V and a maximum collector current of 3A. The device operates at a transition frequency of 1.215GHz with a power rating of 150W. It utilizes a CDFM2 chassis mount package, also identified as SOT443A in some documentation. This component is designed for high-frequency radio applications requiring robust power handling capabilities.
Verify the exact datasheet specifications directly from the manufacturer before integration. Confirm package compatibility and thermal requirements. Note that availability may be limited as this part number is listed as obsolete in some distributor channels. Ensure substitute components meet all electrical and mechanical criteria.
Select this component for applications requiring 150W RF power output at 1.215GHz. Consider the 20V breakdown voltage and 3A current limits during circuit design. Evaluate the chassis mount package for suitable heat dissipation solutions. Compare against available substitutes if new production units are unavailable.
This transistor belongs to the Bipolar RF Transistors category offered by Ampleon USA Inc. The company specializes in RF Power solutions including discrete devices, MMICs, pallets, and modules using LDMOS and GaN technologies. The MZ0912B50Y represents a specific discrete NPN solution within their portfolio.
MZ0912B50Y,114 is listed as obsolete. Check for officially confirmed substitute part numbers provided by Ampleon or authorized distributors. Ensure any replacement matches the 150W power rating, 20V breakdown, and CDFM2/SOT443A package dimensions.