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N0202NY-ZK-E1-AY is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is N0202NY-ZK-E1-AY. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for N0202NY-ZK-E1-AY
- Description：N0202NY-ZK-E1-AY
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for N0202NY-ZK-E1-AY
Single Bipolar Transistors Overview
The N0202NY-ZK-E1-AY is an N-channel power MOSFET manufactured by Renesas Electronics. It utilizes silicon technology and features a DPAK-3 (TO-252-3) surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 60 V, a continuous drain current of 2 A, and a maximum gate-source voltage of ±20 V. The device exhibits a low on-resistance of 8.4 mΩ and operates within a temperature range of -55°C to +175°C.
Single Bipolar Transistors Feature Summary
- N-channel enhancement mode construction for efficient switching
- Low on-resistance design for reduced conduction losses
- Robust thermal performance with high junction temperature capability
Single Bipolar Transistors Applications
- DC-DC converter circuits
- Power management modules
- Motor control applications
Single Bipolar Transistors Procurement Notes
Verify the specific suffix E1-AY against official Renesas documentation to confirm lead-free status and tape-and-reel packaging configuration. Ensure compatibility with RoHS directives for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Single Bipolar Transistors Selection Notes
Select this component when a compact N-channel MOSFET with moderate current handling and low on-resistance is required in a TO-252 package. Consider the 60V rating and 2A continuous current limits relative to your circuit's peak loads. Evaluate thermal dissipation requirements given the 1W power dissipation specification in the specified package style.
Single Bipolar Transistors Part Context
This part belongs to Renesas' portfolio of discrete power semiconductors designed for general-purpose switching applications. It complements other devices in the N-series lineup, offering standardized pinouts and electrical characteristics suitable for integration into various consumer and industrial electronic systems requiring reliable power control.
Single Bipolar Transistors Replacement Considerations
Consult official Renesas substitution guides for verified equivalents. Generic replacements may differ in threshold voltage or thermal resistance; verify all critical parameters against the original datasheet specifications.
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