NC1M120C40GTNG

$21.45

Description：SiC MOSFET N 1200V 40mohm 76A 3
Series：NC1M
Mfr：NovuSem
Package：Tube

SKU:4050ae8a9047 Category: Single FETs, MOSFETs Brand: NovuSem

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Product introduction

NC1M120C40GTNG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NovuSem. Its product description is SiC MOSFET N 1200V 40mohm 76A 3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NC1M120C40GTNG

Description：SiC MOSFET N 1200V 40mohm 76A 3
Series：NC1M
Mfr：NovuSem
Package：Tube
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：76A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：20V
Rds On (Max) @ Id, Vgs：40mOhm @ 35A, 20V
Vgs(th) (Max) @ Id：2.8V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds：2534 pF @ 1000 V
FET Feature：-
Power Dissipation (Max)：375W (Ta)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247-3L
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for NC1M120C40GTNG

NC1M120C40GTNG

Single FETs, MOSFETs Overview

The NC1M120C40GTNG is a Silicon Carbide (SiC) MOSFET from the NC1M series, manufactured by NovuSem. It features an N-channel configuration housed in a TO-247-3L package. The device supports a maximum drain-source voltage of 1200V and a continuous drain current of 76A at 25°C. Its typical on-state resistance is 40mΩ. Operating junction temperature ranges from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

Low switching loss for improved efficiency
Short-circuit capability exceeding 3 microseconds
High avalanche ruggedness
Fast intrinsic diode with low reverse recovery charge

Single FETs, MOSFETs Applications

Photovoltaic inverters
Charging piles
Energy storage systems
Industrial power supplies
Industrial motors

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official NovuSem documentation before integration. Confirm RoHS III compliance status and REACH SVHC declarations match project requirements. Ensure thermal management aligns with specified junction temperature limits. Validate that sourcing channels provide original manufacturer packaging to prevent counterfeit risks.

Single FETs, MOSFETs Selection Notes

Select this component for high-frequency applications requiring reduced passive component size. Evaluate gate drive requirements against the specified threshold voltage. Consider thermal resistance characteristics for heat sink design. Verify short-circuit withstand time matches system protection timing constraints.

Single FETs, MOSFETs Part Context

This part belongs to the NC1M industrial grade series designed to lower static and dynamic losses. It utilizes Silicon Carbide technology to enable higher power density and reduced system costs compared to traditional silicon alternatives.