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Product Detailed Parameters
- Description：IGBT TRENCH FS 750V 225A WAFER
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：750 V
- Current - Collector (Ic) (Max)：225 A
- Current - Collector Pulsed (Icm)：675 A
- Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 200A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：690 nC
- Td (on/off) @ 25°C：104ns/122ns
- Test Condition：400V, 225A, 2Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Wafer
- Grade：-
- Qualification：-
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Overview
The NCG225L75NF8M1 is a Field Stop Trench IGBT die rated for 750 V collector-emitter voltage and 225 A continuous collector current. It utilizes advanced FS4 trench technology to achieve a typical saturation voltage of 1.45 V at 225 A. The component supports an operating junction temperature range from -40°C to +175°C and features a short-circuit withstand time of 4 µs. Electrical characteristics include a gate-emitter threshold voltage of 6.0 V typical, total gate charge of 690 nC, and input capacitance of 21,000 pF. The die measures 394 mils by 394 mils with a thickness of 3.4 mils.
Feature Summary
- AEC-Q101 qualified and PPAP capable for automotive reliability standards
- Emitter pad covered with sinterable metal layer for enhanced thermal performance
- Positive temperature coefficient facilitates easy paralleling of multiple dies
Applications
- Automotive traction modules
- General power modules
Procurement Notes
Verify the specific revision status and lot traceability documentation prior to integration. Confirm that the sawn wafer format aligns with the intended assembly equipment capabilities. Ensure storage conditions remain within the specified dry nitrogen environment to maintain material integrity before use.
Selection Notes
Select this component when high current density and low conduction losses are required in compact module designs. The positive temperature coefficient simplifies parallel operation without complex current balancing circuits. Verify that the driver circuit can support the specified gate charge requirements for optimal switching performance.
Part Context
This part belongs to onsemi's FS4 trench IGBT family, designed specifically for high-power automotive applications. It represents a bare die solution intended for integration into custom power modules rather than standalone discrete packages. The technology focuses on minimizing saturation voltage while maintaining robust short-circuit capability.
Replacement Considerations
Direct replacements require matching the 750 V rating, 225 A current capacity, and identical die dimensions. Verify compatibility with existing sintering processes due to the specific top metal composition. Cross-referencing electrical parameters such as gate charge and threshold voltage is essential for equivalent switching behavior.
