FET, MOSFET Arrays NDC7002N_SB9G007 product image

NDC7002N_SB9G007

$0.07
  • Description:MOSFET 2N-CH 50V 0.51A SSOT6
  • Series:-

SKU:1f437b217bf8 Category: Brand:

  
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NDC7002N_SB9G007 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 50V 0.51A SSOT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NDC7002N_SB9G007

  • Description:MOSFET 2N-CH 50V 0.51A SSOT6
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):50V
  • Current - Continuous Drain (Id) @ 25°C:510mA
  • Rds On (Max) @ Id, Vgs:2Ohm @ 510mA, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:20pF @ 25V
  • Power - Max:700mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package:SuperSOT™-6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NDC7002N_SB9G007

NDC7002N_SB9G007

FET, MOSFET Arrays Overview

The onsemi NDC7002N is a dual N-channel enhancement mode power MOSFET housed in a six-pin SOT-23 surface-mount package. It features a maximum drain-source voltage of 50V and a continuous drain current of 510mA. The device exhibits a maximum drain-source resistance of 4Ω and a typical gate charge of 1nC at the specified gate-source voltage. Power dissipation reaches 960mW, with an operating temperature range spanning from -55°C to +150°C. The component integrates two isolated transistors within a compact footprint designed for efficient thermal and electrical performance.

FET, MOSFET Arrays Feature Summary

  • Dual N-channel configuration providing two independent switching elements in a single package
  • Enhanced mode operation utilizing high unit density DMOS technology for low on-resistance
  • Robust construction ensuring reliable switching performance under various conditions

FET, MOSFET Arrays Applications

  • Low voltage and low current applications requiring small signal switching
  • Small servo motor control circuits
  • Power MOSFET gate driver stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix SB9G007 against official documentation to confirm packaging details and compliance status. Ensure the source document explicitly lists this exact part number variant. Cross-reference the manufacturer's datasheet for the NDC7002N series to validate pinout and electrical characteristics match your design requirements before procurement.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring dual N-channel switching in a minimal space-constrained layout. The 50V rating and 510mA current capability suit low-power signal processing and control tasks. Consider the 4Ω maximum resistance when calculating conduction losses. Verify that the SOT-23 thermal performance meets the system's heat dissipation needs without additional cooling structures.

FET, MOSFET Arrays Part Context

This device belongs to the NDC7002N family of dual MOSFETs from onsemi. It shares core electrical specifications with other variants in the series but differs in packaging or tape-and-reel configurations. The NDC7002N serves as a compact alternative to discrete single-transistor solutions, reducing board space while maintaining comparable switching speeds and voltage ratings for general-purpose low-power applications.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided data. Consult the manufacturer's cross-reference guide for verified alternatives. Ensure any replacement matches the 50V Vds, 510mA Id, and SOT-23-6 package constraints.

NDC7002N_SB9G007NDC7002N_SB9G007
$0.07
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