NDC7003P

FET, MOSFET Arrays Overview

The NDC7003P is a dual-channel P-channel enhancement mode MOSFET manufactured by onsemi. It features a SuperSOT-6 surface-mount package with a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 340mA at 25°C. The device has a maximum power dissipation of 700mW and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a maximum gate-source threshold voltage of 3.5V at 250µA, a maximum gate charge of 2.2nC at 10V, and an input capacitance of 66pF at 25V. The on-resistance is specified as 5Ω at 340mA and 10V.

FET, MOSFET Arrays Feature Summary

• Dual-channel P-channel configuration for compact circuit integration
• Logic-level gate operation compatible with standard control signals
• Surface-mount SuperSOT-6 package design for space-constrained applications

FET, MOSFET Arrays Applications

• Low-side switching in portable electronic devices
• Battery protection circuits requiring dual-channel isolation
• Signal routing and multiplexing in consumer electronics

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets RoHS compliance requirements for your target market. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel MOSFET solution is required with a 60V voltage rating and low current handling capability. Ensure the application logic levels align with the 3.5V maximum threshold voltage specification. Consider the 700mW power dissipation limit and thermal management requirements associated with the SuperSOT-6 package during PCB layout.

FET, MOSFET Arrays Part Context

This component belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET array category. It serves as a complementary device to other members of the NDC series, offering integrated dual-channel functionality in a small outline transistor footprint designed for high-density surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical parameter margins before considering any alternative components from different manufacturers or product lines.