NDH8302P

FET, MOSFET Arrays Overview

The NDH8302P is a dual P-channel enhancement mode field-effect transistor manufactured by Fairchild Semiconductor. It is housed in an SOT-363 surface-mount package, designed for compact circuit layouts. The device features a drain-source voltage rating of -20V and a continuous drain current capacity of -1.5A at 25°C. Key electrical characteristics include a maximum on-resistance of 0.14 ohms at a gate-source voltage of -4.5V. The component operates within a temperature range of -55°C to 150°C junction temperature.

FET, MOSFET Arrays Feature Summary

• Dual P-channel configuration integrated into a single compact surface-mount package
• Low on-resistance optimized for efficient power switching applications
• Enhancement mode operation with logic-level gate drive compatibility

FET, MOSFET Arrays Applications

• DC-DC converter synchronous rectification circuits
• Load switch implementations for portable electronics
• Power management modules requiring compact footprint solutions

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor, now part of ON Semiconductor, to ensure authenticity. Confirm the specific suffix matches the standard NDH8302P designation without additional functional modifiers. Check datasheet revisions for any updates to absolute maximum ratings or thermal characteristics before final integration.

FET, MOSFET Arrays Selection Notes

Select this component when a dual P-channel FET solution is required in an SOT-363 package to save board space. Ensure the application voltage does not exceed the 20V drain-source limit. Consider the 0.14 ohm on-resistance for power loss calculations in low-voltage, high-current paths. Verify that the gate drive voltage levels are compatible with the specified threshold requirements.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual MOSFET arrays designed for space-constrained power management designs. It serves as an alternative to discrete dual-transistor setups, offering improved thermal performance through shared substrate connections. The SOT-363 form factor allows for automated assembly in high-volume consumer and industrial electronic manufacturing processes.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives from ON Semiconductor or other manufacturers offering identical SOT-363 dual P-channel specifications. Verify that substitute parts maintain the same -20V voltage rating and comparable on-resistance values to ensure circuit performance parity.