NDH8321C

FET, MOSFET Arrays Overview

The NDH8321C is a dual N- and P-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor. It utilizes proprietary high cell density DMOS technology for optimized performance. The device features a SuperSOT™-8 surface mount package, providing compact integration for space-constrained designs. Electrical specifications include a maximum drain-source voltage of 20V and continuous drain currents rated at 3.8A for the N-channel and 2.7A for the P-channel under ambient temperature conditions. Thermal dissipation capability is specified at 800mW.

FET, MOSFET Arrays Feature Summary

• Dual configuration integrating both N-channel and P-channel MOSFETs in a single package
• High cell density DMOS technology for enhanced efficiency
• Surface mount SuperSOT™-8 packaging for compact board layout

FET, MOSFET Arrays Applications

• DC/DC converter circuits
• Power management systems
• Motor control applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the part number matches the specific Fairchild Semiconductor designation. Check datasheet revisions to ensure compatibility with current design requirements. Validate package markings against official documentation to prevent counterfeit substitution.

FET, MOSFET Arrays Selection Notes

Select this component when a combined N-P channel solution is required for synchronous rectification or bridge driving. Ensure the 20V voltage rating aligns with system operating levels. Consider the thermal constraints associated with the 800mW dissipation limit in the SuperSOT-8 package during high-current operation phases.

FET, MOSFET Arrays Part Context

This device belongs to the Fairchild Semiconductor discrete power family, specifically within the MOSFET arrays category. It represents a consolidation strategy where separate N and P transistors are integrated to reduce footprint. The product line emphasizes high-density packaging solutions for modern electronic equipment requiring efficient power switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference data for equivalent dual N-P channel MOSFETs in SuperSOT-8 packages. Verify pinout compatibility and electrical parameters before substituting. No specific substitute part numbers are confirmed in public documentation.