NDH8521C

FET, MOSFET Arrays Overview

The NDH8521C is a dual N- and P-channel enhancement mode field effect transistor manufactured by Fairchild Semiconductor, now part of onsemi. It utilizes proprietary high cell density DMOS technology for efficient performance. The device features a drain-source breakdown voltage of 30 V and supports continuous drain currents of 3.8 A for the N-channel and 2.7 A for the P-channel. Power dissipation is rated at 800 mW. It operates within a temperature range of -55°C to +150°C and is housed in an SSOT-8 surface mount package.

FET, MOSFET Arrays Feature Summary

• Integrates one N-channel and one P-channel MOSFET in a single compact package
• Utilizes high cell density DMOS technology for optimized performance
• Supports surface mount installation via SSOT-8 packaging

FET, MOSFET Arrays Applications

• Battery protection circuits
• Power management systems
• DC/DC converter applications

FET, MOSFET Arrays Procurement Notes

Verify component authenticity due to manufacturer acquisition history. Confirm RoHS compliance status as records indicate non-compliance. Check current availability constraints as supply may be restricted or discontinued. Ensure the SSOT-8 package matches design requirements. Validate datasheet version against original Fairchild documentation.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring complementary N and P-channel switching in limited space. Consider the 30 V voltage rating and specific current limits for load requirements. Evaluate thermal management needs given the 800 mW power dissipation limit. Verify compatibility with standard surface mount assembly processes for the SSOT-8 footprint.

FET, MOSFET Arrays Part Context

The NDH8521C belongs to the family of dual MOSFET arrays designed for mixed-signal and power applications. Originally produced by Fairchild Semiconductor, production rights transferred to onsemi following corporate acquisition. The component serves as a compact solution for driving loads requiring both polarities in portable and industrial electronics.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and electrical parameters before substitution. Check for updated versions from onsemi that may replace the original Fairchild designation.