NDS8926

FET, MOSFET Arrays Overview

The NDS8926 is a dual N-channel enhancement mode field effect transistor manufactured by onsemi. It features a 20 V drain-source voltage rating and a continuous drain current of 5.5 A. The device exhibits an on-state resistance of 0.035 Ω at VGS = 4.5 V and 5.5 A, or 0.045 Ω at VGS = 2.7 V and 5 A. Total gate charge is typically 30 nC at VGS = 4.5 V. Operating temperature ranges from -55°C to +150°C. Power dissipation is rated at 2 W for dual operation.

FET, MOSFET Arrays Feature Summary

• High density cell design for extremely low RDS(ON).
• High power and current handling capability in a widely used surface mount package.
• Dual MOSFET in surface mount package.

FET, MOSFET Arrays Applications

• DC motor control
• DC/DC conversion

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm that the specific revision matches the required datasheet specifications. Ensure the SO-8 package dimensions align with the target PCB footprint requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring fast switching and low in-line power loss in low voltage environments. Consider the thermal resistance characteristics when designing the copper mounting pad area to ensure adequate heat dissipation within the specified operating temperature range.

FET, MOSFET Arrays Part Context

This dual N-channel MOSFET utilizes high cell density DMOS technology tailored to minimize on-state resistance. It is designed for surface mount installation, providing robust performance in compact electronic designs where space efficiency and thermal management are critical constraints.

FET, MOSFET Arrays Replacement Considerations

Check for FDS8926A as a potential substitute, though verify exact parameter alignment including voltage ratings and package compatibility before implementation.

FET, MOSFET Arrays FAQ

What is the maximum steady-state drain current?

The maximum continuous drain current is 5.5 A under standard test conditions.

How does the on-resistance vary with temperature?

The on-resistance increases as junction temperature rises, with normalized values provided in the typical electrical characteristics graphs.

What is the total gate charge value?

The total gate charge is typically 30 nC when tested at VDS = 10 V, ID = 5.5 A, and VGS = 4.5 V.