FET, MOSFET Arrays NDS9933A product image

NDS9933A

$0.50
  • Description:MOSFET 2P-CH 20V 2.8A 8SOIC
  • Series:-

SKU:611550b4baac Category: Brand:

  
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NDS9933A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.8A 8SOIC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NDS9933A

  • Description:MOSFET 2P-CH 20V 2.8A 8SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:2.8A
  • Rds On (Max) @ Id, Vgs:140mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:8.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:405pF @ 10V
  • Power - Max:900mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for NDS9933A

NDS9933A

FET, MOSFET Arrays Overview

The NDS9933A is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured using high cell density DMOS technology. It features an SO-8 surface mount package with two independent channels. Key electrical parameters include a Drain-Source Voltage (VDSS) of -20 V and a continuous Drain Current (ID) of -2.8 A. The static Drain-Source On-Resistance (RDS(on)) is specified at 0.14 Ω @ VGS = -4.5 V, 0.19 Ω @ VGS = -2.7 V, and 0.20 Ω @ VGS = -2.5 V. Operating junction temperature ranges from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual MOSFET configuration in a widely used surface mount package for compact designs.
  • High density cell design engineered to minimize on-state resistance.
  • Optimized for low voltage applications requiring fast switching and transient resistance.

FET, MOSFET Arrays Applications

  • DC motor control circuits
  • DC/DC conversion systems

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi. Confirm the datasheet revision matches Rev. A specifications. Ensure the package type corresponds to SO-8 (S1) and check for RoHS compliance status if required by specific project standards.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications where fast switching speed and low inline power loss are critical. Evaluate thermal performance based on the 78 °C/W junction-to-ambient resistance value. Consider the -20 V rating and -2.8 A current limit when designing the circuit load requirements.

FET, MOSFET Arrays Part Context

This device belongs to the category of Dual P-Channel Enhancement Mode Field Effect Transistors. It utilizes proprietary high cell density DMOS technology developed by Fairchild Semiconductor to achieve superior switching performance and minimized on-state resistance compared to standard discrete solutions.

FET, MOSFET Arrays Replacement Considerations

Check for cross-reference parts such as FDS9953A which appears in packaging labels within the documentation. Verify pinout compatibility and electrical parameter alignment before substitution.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current for the NDS9933A?

The maximum continuous drain current is -2.8 A.

What is the operating junction temperature range?

The operating and storage junction temperature range is -55°C to +150°C.

What is the typical gate threshold voltage?

The gate threshold voltage typically ranges from -0.4 V to -1 V under test conditions of VDS = VGS and ID = -250 μA.

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