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NDS9933A is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 2.8A 8SOIC. Review the specifications below when checking this part for your BOM.
The NDS9933A is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured using high cell density DMOS technology. It features an SO-8 surface mount package with two independent channels. Key electrical parameters include a Drain-Source Voltage (VDSS) of -20 V and a continuous Drain Current (ID) of -2.8 A. The static Drain-Source On-Resistance (RDS(on)) is specified at 0.14 Ω @ VGS = -4.5 V, 0.19 Ω @ VGS = -2.7 V, and 0.20 Ω @ VGS = -2.5 V. Operating junction temperature ranges from -55°C to +150°C.
Verify the manufacturer origin as Fairchild Semiconductor or its successor entities like onsemi. Confirm the datasheet revision matches Rev. A specifications. Ensure the package type corresponds to SO-8 (S1) and check for RoHS compliance status if required by specific project standards.
Select this component for low voltage applications where fast switching speed and low inline power loss are critical. Evaluate thermal performance based on the 78 °C/W junction-to-ambient resistance value. Consider the -20 V rating and -2.8 A current limit when designing the circuit load requirements.
This device belongs to the category of Dual P-Channel Enhancement Mode Field Effect Transistors. It utilizes proprietary high cell density DMOS technology developed by Fairchild Semiconductor to achieve superior switching performance and minimized on-state resistance compared to standard discrete solutions.
Check for cross-reference parts such as FDS9953A which appears in packaging labels within the documentation. Verify pinout compatibility and electrical parameter alignment before substitution.
The maximum continuous drain current is -2.8 A.
The operating and storage junction temperature range is -55°C to +150°C.
The gate threshold voltage typically ranges from -0.4 V to -1 V under test conditions of VDS = VGS and ID = -250 μA.
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