NDS9947

FET, MOSFET Arrays Overview

The NDS9947 is a dual P-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a Drain-Source Voltage (VDSS) of -20 V and a continuous Drain Current (ID) of ±3.5 A at 25°C. The device exhibits a maximum Static Drain-Source On-Resistance (RDS(ON)) of 0.1 Ω at VGS = -10 V and ID = -3.5 A. Total Gate Charge (Qg) is typically 19 nC. Power Dissipation (PD) for dual operation is rated at 2 W, with an Operating Temperature Range from -55 to 150 °C. The component utilizes DMOS technology in an SOIC-8 surface mount package.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration integrated into a single surface mount package.
• High density cell design optimized for extremely low on-state resistance.
• Capable of handling high power and current within standard surface mount form factors.

FET, MOSFET Arrays Applications

• Notebook computer power management
• Battery powered circuits requiring fast switching
• Low voltage applications needing low in-line power loss

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific ordering suffix matches the required packaging option, such as tape and reel quantities or rail configurations. Ensure the revision level aligns with your design requirements before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications where compact dual-channel integration is necessary. Evaluate thermal performance based on the specific PCB copper pad area, as junction-to-ambient resistance varies significantly with mounting surface size. Ensure gate drive voltages remain within the specified limits to maintain optimal RDS(ON) characteristics.

FET, MOSFET Arrays Part Context

This component belongs to the PowerTrench series of enhancement mode field effect transistors. It represents a transition period product originally developed by Fairchild Semiconductor before the corporate acquisition by onsemi. The datasheet retains original Fairchild branding and documentation styles while being distributed under the onsemi portfolio.

FET, MOSFET Arrays Replacement Considerations

NDS9948: Dual P-Channel MOSFET with higher voltage rating (-60V).

FET, MOSFET Arrays FAQ

What is the typical total gate charge (Qg) for the NDS9947?

The typical total gate charge is 19 nC when tested at VDS = -10 V, ID = -3.5 A, and VGS = -10 V.

How does the on-resistance vary with temperature?

The drain-source on-resistance increases as the junction temperature rises. At TJ = 125°C, the maximum RDS(ON) increases to 0.16 Ω compared to the 0.1 Ω maximum at 25°C.

Is the NDS9947 suitable for life support devices?

No. The manufacturer explicitly states that products are not authorized for use as critical components in life support devices without express written approval.