NDS9955

FET, MOSFET Arrays Overview

The NDS9955 is a dual N-channel enhancement mode field effect transistor manufactured using high cell density DMOS technology. It features a maximum drain-source voltage of 50 V and a continuous drain current of 3 A. The device offers an on-state resistance of 0.130 Ω at VGS = 10 V and 0.200 Ω at VGS = 4.5 V. It operates within a temperature range of -55°C to 150°C and provides a power dissipation of 2 W for dual operation. The component is housed in an SO-8 surface mount package.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration integrated into a single surface mount package
• High density cell design engineered for extremely low on-state resistance
• Optimized switching performance with superior transient resistance

FET, MOSFET Arrays Applications

• Disk drive motor control
• Battery powered circuits
• Low voltage applications requiring fast switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as the datasheet indicates Fairchild Semiconductor production. Confirm the specific package variant (SO-8) and revision status before ordering. Ensure compatibility with existing board layouts designed for this footprint. Check for any discontinuance notices or lifecycle changes associated with the part number.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring two independent N-channel switches in a compact form factor. Evaluate thermal management requirements based on the junction-to-ambient resistance of 78 °C/W. Consider the gate threshold voltage characteristics when interfacing with logic-level drivers. Verify that the 50 V breakdown voltage meets the circuit's peak voltage demands.

FET, MOSFET Arrays Part Context

This component belongs to the NDS series of dual MOSFETs produced by Fairchild Semiconductor. It utilizes proprietary high cell density DMOS technology to minimize on-state resistance while maintaining robust current handling capabilities. The device is specifically tailored for low voltage applications where space efficiency and switching speed are critical design parameters.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the SO-8 package dimensions and pinout configuration. Verify that electrical ratings, particularly RDS(ON) and VDS, meet or exceed the original specifications.