NDS9958

FET, MOSFET Arrays Overview

The NDS9958 is a dual-channel enhancement mode field effect transistor containing one N-Channel and one P-Channel MOSFET in an SOIC-8 package. It features a Drain-Source Voltage (VDSS) of ±20V and a continuous Drain Current (ID) of ±3.5A at 25°C. The static Drain-Source On-Resistance (RDS(ON)) is typically 0.1Ω for both channels at VGS = ±10V and ID = ±3.5A. Total Gate Charge (Qg) is typically 30nC. Power Dissipation is rated at 2W for dual operation and up to 1.6W for single operation on large pads. Operating temperature ranges from -55°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Dual N- and P-Channel configuration in a surface mount package
• High density cell design for low on-state resistance
• Capable of withstanding high energy pulses in avalanche modes

FET, MOSFET Arrays Applications

• Notebook computer power management
• Half bridge motor control
• Cellular phone circuits
• Battery powered circuits requiring fast switching

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer origin, as the component was originally produced by Fairchild Semiconductor. Confirm current availability status through authorized distributors, as production may have transitioned or discontinued. Ensure the specific package variant matches the required PCB footprint and thermal dissipation needs.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage applications requiring complementary N-P channel pairs in a compact form factor. Evaluate thermal resistance requirements based on the specific copper pad area used on the PCB, as junction-to-ambient resistance varies significantly with board layout dimensions.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual MOSFETs designed for portable electronics. It utilizes DMOS technology to minimize on-state resistance while providing robust transient handling capabilities suitable for battery-operated environments where space and efficiency are critical constraints.

FET, MOSFET Arrays Replacement Considerations

Check for direct equivalents such as the FDS8958A which offers similar dual N-P channel functionality. Verify pinout compatibility and ensure that replacement parts meet the same voltage and current ratings for the intended application.

FET, MOSFET Arrays FAQ

What is the typical RDS(ON) value for the NDS9958?

The typical Drain-Source On-Resistance is 0.1Ω for both the N-Channel and P-Channel when tested at VGS = ±10V and ID = ±3.5A.

How does the thermal resistance change with board layout?

Junction-to-Ambient thermal resistance (RθJA) varies from 78°C/W on a 0.5 in² pad to 135°C/W on a 0.003 in² pad, depending on the copper area and thickness used for mounting.

Is the NDS9958 suitable for automotive applications?

The datasheet does not specify AEC-Q101 certification or automotive-grade qualification for this part number; it is primarily described for notebook and cellular phone applications.