NDS9959

FET, MOSFET Arrays Overview

The NDS9959 is a dual N-channel enhancement mode field effect transistor manufactured using Fairchild's high cell density DMOS technology. It features a SuperSOT-8 surface mount package with two independent channels. Key electrical parameters include a drain-source voltage of 50 V and a continuous drain current of ±2.0 A at 25°C. The static drain-source on-resistance is 0.3 Ω at VGS = 10 V. Power dissipation reaches 2 W for dual operation. Thermal resistance from junction to ambient is 78 °C/W under standard mounting conditions.

FET, MOSFET Arrays Feature Summary

• Dual MOSFET configuration in a widely used surface mount package
• High density cell design for extremely low RDS(ON)
• Superior switching performance and high energy pulse withstand capability

FET, MOSFET Arrays Applications

• DC motor control
• DC/DC conversion
• Low voltage applications requiring fast switching

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision status, as the document indicates an Obsolete product status. Confirm the manufacturer source, noting the transition from Fairchild Semiconductor to ON Semiconductor. Ensure the specific ordering suffix matches the required package and tape/reel specifications before finalizing procurement orders.

FET, MOSFET Arrays Selection Notes

Select this component for low voltage circuits requiring dual channel isolation in a compact footprint. Evaluate thermal management requirements based on the 78 °C/W junction-to-ambient resistance. Verify that the 50 V breakdown voltage and 2.0 A continuous current ratings exceed the maximum operational loads and transient spikes expected in the target application environment.

FET, MOSFET Arrays Part Context

This device belongs to the family of dual N-channel enhancement mode power field effect transistors produced via proprietary DMOS technology. It was originally developed by Fairchild Semiconductor and is now part of the ON Semiconductor portfolio following corporate integration. The SuperSOT-8 package provides a standardized surface mount solution for space-constrained designs.

FET, MOSFET Arrays Replacement Considerations

Check for updated Fairchild or ON Semiconductor part numbers where underscores may have been replaced by dashes. Verify pinout compatibility and electrical parameter equivalence if substituting with other dual N-channel MOSFETs in the SuperSOT-8 package.

FET, MOSFET Arrays FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is ±2.0 A at an ambient temperature of 25°C.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises, as shown in the normalized on-resistance variation curves provided in the datasheet.

What is the total gate charge specification?

The typical total gate charge is 4.3 nC, with a maximum of 15 nC, measured at VDS = 25 V, ID = 1.3 A, and VGS = 10 V.