NDT451AN_J23Z

$0.66

Description：MOSFET N-CH 30V 7.2A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:f02c865219c2 Category: Single FETs, MOSFETs Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

NDT451AN_J23Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 7.2A SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NDT451AN_J23Z

Description：MOSFET N-CH 30V 7.2A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：35mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：720 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：3W (Ta)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for NDT451AN_J23Z

NDT451AN_J23Z

Single FETs, MOSFETs Overview

The NDT451AN is an N-Channel Enhancement Mode Field Effect Transistor manufactured by onsemi. It features a Drain-Source Voltage (VDSS) of 30 V and a continuous Drain Current (ID) of 7.2 A at 25°C. The device utilizes high cell density DMOS technology to achieve low on-state resistance, specified as 0.035 Ω at VGS = 10 V and 0.05 Ω at VGS = 4.5 V. It operates within a temperature range of -65°C to 150°C and is housed in a surface mount SOT-223 package.

Single FETs, MOSFETs Feature Summary

High power and current handling capability in a widely used surface mount package
High density cell design for extremely low RDS(ON)
Tailored to minimize on-state resistance and provide superior switching performance

Single FETs, MOSFETs Applications

DC motor control
DC/DC conversion

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact packaging or variant specifications. Confirm that the component meets all applicable regulatory standards required for the intended deployment environment. Ensure thermal management aligns with datasheet recommendations for the selected PCB layout.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring fast switching and low in-line power loss in low voltage environments. Evaluate the thermal resistance characteristics relative to the target board copper area to ensure safe operating limits are maintained under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Power SOT series of N-Channel enhancement mode power field effect transistors. These devices are produced using proprietary high cell density DMOS technology designed specifically for minimizing on-state resistance while maintaining robust transient resistance capabilities.