NE25139-T1-U73

Overview

The NE25139-T1-U73 is a Gallium Arsenide (GaAs) N-Channel Metal Semiconductor Field-Effect Transistor (MESFET) designed for Ultra High Frequency (UHF) band applications. It features a dual-gate, depletion mode configuration within a single-element structure. The device utilizes a CASE 39 package with four pins and plastic/epoxy body material. Key electrical specifications include a minimum drain-source breakdown voltage of 13 V, a maximum drain current of 0.04 A, and a maximum feedback capacitance (Crss) of 0.03 pF. It operates at temperatures up to 125 °C.

Feature Summary

• Dual-gate GaAs MESFET architecture supporting UHF operations
• Low noise performance characteristics
• Depletion mode operation with single-element design

Applications

• RF small signal amplification in UHF bands
• Low noise amplifier circuits
• General purpose RF front-end modules

Procurement Notes

Verify the specific suffix -U73 against official California Eastern Labs documentation to confirm tape-and-reel packaging or binning variations. Ensure compatibility with CASE 39 footprint requirements during PCB layout. Cross-reference datasheet revisions to validate pinout consistency and thermal management guidelines for the plastic epoxy package.

Selection Notes

Select this component for designs requiring low-noise UHF amplification with dual-gate control capabilities. The GaAs technology offers superior high-frequency performance compared to silicon alternatives. Consider the 13 V breakdown voltage and 0.04 A current limits when designing bias networks. The dual-gate structure allows for independent gain and isolation control, suitable for complex RF signal processing tasks.

Part Context

This part belongs to the NE25139 series of general-purpose dual-gate GaAs MESFETs originally developed by NEC and later manufactured by California Eastern Labs (CEL). These devices are widely recognized for their utility in UHF and L-band applications where low noise figure and stable gain are critical. The series represents a standard solution for discrete RF amplification before the widespread adoption of MMICs.

Replacement Considerations

Direct substitutes include the NE25139-T1 from NEC or CEL. Other compatible dual-gate GaAs MESFETs may include the NE25118 or NE25337, though pinouts and specific RF parameters must be verified against the target application requirements.