NE3210S01-T1B

Overview

The NE3210S01-T1B is a Hetero Junction Field Effect Transistor (HJ-FET) manufactured by California Eastern Labs. It operates in the X to Ku band and functions as a super low noise amplifier. The device utilizes hetero junction technology to create high mobility electrons, resulting in excellent low noise characteristics and associated gain. Key electrical parameters include a typical noise figure of 0.35 dB and a typical associated gain of 13.5 dB at 12 GHz. The gate length is specified as less than or equal to 0.20 µm, with a gate width of 160 µm.

Feature Summary

• Utilizes hetero junction technology for high electron mobility
• Designed for super low noise amplification applications
• Provides high associated gain in X to Ku frequency bands

Applications

• Direct Broadcast Satellite (DBS) systems
• Commercial satellite communication systems
• Low noise amplifier stages in RF front-ends

Procurement Notes

Verify the manufacturer designation carefully, as this component has been produced by multiple entities including NEC, Renesas Technology Corp, and California Eastern Labs. Ensure the datasheet corresponds specifically to the CEL version when sourcing. Confirm that the T1B suffix matches the required tape and reel packaging specifications for your assembly process.

Selection Notes

Select this component for applications requiring minimal signal degradation in the X and Ku bands. The specific gate dimensions and HJ-FET structure make it suitable for high-frequency, low-noise requirements where standard FETs may not suffice. Evaluate the trade-off between the low noise figure and the associated gain against system link budget requirements.

Part Context

This component belongs to the family of Hetero Junction FETs designed for microwave frequencies. These devices are engineered to leverage the properties of hetero junctions to achieve superior performance metrics compared to conventional homojunction devices. The NE3210 series is widely recognized in satellite communications for its reliability and noise performance.

Replacement Considerations

The NE3210S01-T1 is a similar part number listed in public databases. Verify pinout compatibility and exact electrical parameter tolerances before substitution. Other manufacturers may offer equivalent HJ-FETs, but direct cross-referencing requires detailed datasheet comparison.