NE34018-T1-64-A

Overview

The NE34018 is a GaAs Hetero-Junction FET in an SOT-343 package, designed for low noise amplification from 1 to 3 GHz. At VDS = 2V and ID = 5mA (2 GHz), it achieves a typical Noise Figure of 0.6 dB and Associated Gain of 16.0 dB. Maximum Output Power at P1dB reaches 16.5 dBm at VDS = 3V/ID = 30mA. The device features a gate length of 0.6 µm and width of 400 µm, with a thermal resistance of 833 °C/W.

Feature Summary

• Utilizes ion implantation fabrication for improved RF performance and uniformity
• Housed in a miniature plastic surface mount package for compact integration
• Optimized for high gain and minimal signal degradation in the L-band frequency range

Applications

• GPS receiver front ends
• PCS communication systems
• WLAN infrastructure components
• MMDS applications

Procurement Notes

Verify the specific ordering suffix to confirm the drain current binning range and packaging format. Standard bulk units cover up to 3K with a broad current spread, while tape and reel options provide tighter bins. Ensure the marking code matches the required electrical specifications for your design.

Selection Notes

Select based on the required noise figure versus gain trade-off at your operating frequency. Higher bias currents increase gain but also power dissipation. Verify that the total power dissipation remains within limits given the ambient temperature and thermal resistance constraints of your PCB layout.

Part Context

This component is manufactured by California Eastern Laboratories (CEL). It serves as a discrete transistor solution for RF circuits requiring low noise characteristics. The device replaces older through-hole technologies with a modern surface-mount form factor suitable for automated assembly processes.

Replacement Considerations

Check pinout compatibility if substituting with other SOT-343 GaAs FETs. Verify that the replacement device meets or exceeds the required noise figure and gain specifications at your target frequency and bias conditions.

FAQ

What is the maximum Drain-to-Source Voltage?

The absolute maximum rating for Drain-to-Source Voltage is 4 V.

How does the gate length affect performance?

The device uses a 0.6 µm gate length, which contributes to its high associated gain and low noise figure in the 1-3 GHz range.

Is this device suitable for life support applications?

No, these products are not intended for use in life support devices where malfunction could result in personal injury.