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The NE350184C is a Gallium Arsenide Heterojunction Field-Effect Transistor (HFET) manufactured by CEL. Designed for high-frequency radio frequency applications, this component operates with a test voltage of 2V and a test current of 10 mA. It features a maximum drain-source breakdown voltage of 4 V and a gate-source breakdown voltage of -3 V. The device supports continuous drain currents up to 70 mA and delivers a gain of 13.5 dB at frequencies reaching 20 GHz. With a noise figure of 0.7 dB, it is optimized for low-noise performance in micro-scale packages.
Verify the specific ordering suffix, such as -T1A or -T1A-A, to confirm tape and reel packaging specifications and quantity per reel. Ensure compatibility with Pb-free manufacturing standards if required by your assembly process. Cross-reference the exact part number with official CEL documentation to confirm electrical tolerances and package dimensions before procurement.
Select this component when designing circuits requiring operation near 20 GHz with minimal signal degradation. Consider the 4 V breakdown limit and 70 mA current rating to ensure safe operating areas are not exceeded. Evaluate the 0.7 dB noise figure against system sensitivity requirements to determine suitability for front-end receiver applications.
This HFET belongs to CEL's portfolio of radio frequency discrete semiconductors. It is categorized under GaAs HJ-FETs, distinct from standard silicon MOSFETs. The device serves specialized roles in high-speed electronics where traditional transistors fail to meet frequency or noise performance benchmarks.
No direct public substitute part numbers are confirmed for this specific model. Consult CEL technical support for equivalent alternatives with matching 20 GHz performance and micro-package constraints.