NE350184C

NE350184C

  • Description:RF MOSFET GAAS HJ-FET 2V 84C
  • Series:-

SKU:32ab810672b8 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET GAAS HJ-FET 2V 84C
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Technology:GaAs HJ-FET
  • Frequency:20GHz
  • Gain:13.5dB
  • Voltage - Test:2 V
  • Current Rating (Amps):70mA
  • Noise Figure:0.7dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Micro-X ceramic (84C)
  • Supplier Device Package:84C
  • Configuration:-

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NE350184C

Overview

The NE350184C is a Gallium Arsenide Heterojunction Field-Effect Transistor (HFET) manufactured by CEL. Designed for high-frequency radio frequency applications, this component operates with a test voltage of 2V and a test current of 10 mA. It features a maximum drain-source breakdown voltage of 4 V and a gate-source breakdown voltage of -3 V. The device supports continuous drain currents up to 70 mA and delivers a gain of 13.5 dB at frequencies reaching 20 GHz. With a noise figure of 0.7 dB, it is optimized for low-noise performance in micro-scale packages.

Feature Summary

  • Utilizes Gallium Arsenide HJ-FET technology for high-frequency operation
  • Optimized for low noise figure performance in RF circuits
  • Designed for micro-package integration in compact systems

Applications

  • Low-noise amplifier stages in wireless communication systems
  • RF signal processing in microwave frequency bands
  • High-frequency oscillator circuits requiring stable gain

Procurement Notes

Verify the specific ordering suffix, such as -T1A or -T1A-A, to confirm tape and reel packaging specifications and quantity per reel. Ensure compatibility with Pb-free manufacturing standards if required by your assembly process. Cross-reference the exact part number with official CEL documentation to confirm electrical tolerances and package dimensions before procurement.

Selection Notes

Select this component when designing circuits requiring operation near 20 GHz with minimal signal degradation. Consider the 4 V breakdown limit and 70 mA current rating to ensure safe operating areas are not exceeded. Evaluate the 0.7 dB noise figure against system sensitivity requirements to determine suitability for front-end receiver applications.

Part Context

This HFET belongs to CEL's portfolio of radio frequency discrete semiconductors. It is categorized under GaAs HJ-FETs, distinct from standard silicon MOSFETs. The device serves specialized roles in high-speed electronics where traditional transistors fail to meet frequency or noise performance benchmarks.

Replacement Considerations

No direct public substitute part numbers are confirmed for this specific model. Consult CEL technical support for equivalent alternatives with matching 20 GHz performance and micro-package constraints.

NE350184CNE350184C

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