NE3503M04-T2B-A

Overview

The NE3503M04-T2B-A is an N-channel HJ-FET RF MOSFET designed for C to Ku band applications. It functions as a super low noise and high-gain amplifier. Key electrical parameters include a drain-source voltage of 2 V, a maximum current of 10 mA, and operation up to 12 GHz. The device provides a gain of 12 dB. It utilizes the M04 surface-mount package.

Feature Summary

• N-channel Heterojunction Field-Effect Transistor (HJ-FET) architecture
• Optimized for super low noise figure performance
• Engineered for high associated gain in RF amplification
• Suitable for C to Ku frequency band operations

Applications

• C-band low noise amplifier stages
• Ku-band signal amplification systems
• Satellite communication receiver front-ends
• Microwave radio link components

Procurement Notes

Verify the specific suffix 'A' against official Renesas documentation to confirm exact pinout and tape-and-reel specifications. Confirm end-of-life status with the manufacturer prior to design-in, as availability may be limited. Ensure the M04 package dimensions match the target PCB footprint requirements strictly.

Selection Notes

Select this component when designing for C or Ku band frequencies requiring minimal noise addition. The 2 V supply rating dictates biasing circuit constraints. Verify that the 12 GHz operational limit meets the system bandwidth requirements. Consider thermal management within the small SMD package for continuous power dissipation limits.

Part Context

This part belongs to the NE3503 series of RF transistors from Renesas Electronics. It is an evolution of earlier NEC designs, now manufactured under Renesas. The M04 package variant distinguishes it from other lead-frame options in the same family, offering specific surface-mount integration capabilities for modern assembly processes.

Replacement Considerations

Check for direct cross-reference part numbers such as NE3503M04-T2B or NE3503M04-T2-A in official substitution lists. Verify pin compatibility and electrical parameter equivalence before substituting. Generic RF FETs are not suitable replacements due to specific noise and gain characteristics.