NE3509M04-A

NE3509M04-A

  • Description:RF MOSFET GAAS HJ-FET 2V M04
  • Series:-

SKU:810af5dbe103 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET GAAS HJ-FET 2V M04
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Technology:GaAs HJ-FET
  • Frequency:2GHz
  • Gain:17.5dB
  • Voltage - Test:2 V
  • Current Rating (Amps):60mA
  • Noise Figure:0.4dB
  • Current - Test:10 mA
  • Power - Output:11dBm
  • Voltage - Rated:4 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-343F
  • Supplier Device Package:M04
  • Configuration:-

Download product information

NE3509M04-A

Overview

The NE3509M04-A is an N-channel HJ-FET designed for L-to-S band low noise amplifier applications. It operates at a frequency of 2 GHz with a typical gain of 17.5 dB and a noise figure of 0.4 dB. The device requires a gate-source voltage of 2 V and draws a drain current of 10 mA. Key performance metrics include a P1dB compression point of 11 dBm and a maximum operating temperature of +150°C. It is housed in the M04 thin-type super mini-mold package.

Feature Summary

  • Utilizes heterojunction field-effect transistor (HJ-FET) technology for high-performance RF amplification
  • Delivers exceptional noise performance suitable for sensitive receiver front-ends
  • Engineered for operation within L-to-S frequency bands

Applications

  • Low noise amplifier circuits in wireless communication systems
  • RF front-end modules requiring high gain and low noise figures
  • Satellite navigation receiver components

Procurement Notes

Verify the specific manufacturer designation, as this component may be listed under Renesas Electronics or CEL depending on the supply chain source. Confirm the exact package marking and datasheet revision to ensure compatibility with design specifications. Cross-reference the electrical parameters against the official product documentation provided by the authorized distributor to validate performance characteristics before integration.

Selection Notes

Select this component for designs prioritizing low noise figure and moderate power output in the L-to-S band range. The 2V bias requirement and 10mA current draw offer efficient power management compared to higher voltage alternatives. Ensure the PCB layout supports the M04 package dimensions and thermal requirements for reliable operation up to the specified temperature limits.

Part Context

This part belongs to the family of low noise FETs and ICs from CEL, which are known for delivering exceptional noise performance even beyond 20GHz. The NE3509 series specifically targets applications requiring high gain and low noise in compact packages, serving as a critical active element in RF signal chains.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

NE3509M04-ANE3509M04-A

Click on the inquiry