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The NE3509M04-A is an N-channel HJ-FET designed for L-to-S band low noise amplifier applications. It operates at a frequency of 2 GHz with a typical gain of 17.5 dB and a noise figure of 0.4 dB. The device requires a gate-source voltage of 2 V and draws a drain current of 10 mA. Key performance metrics include a P1dB compression point of 11 dBm and a maximum operating temperature of +150°C. It is housed in the M04 thin-type super mini-mold package.
Verify the specific manufacturer designation, as this component may be listed under Renesas Electronics or CEL depending on the supply chain source. Confirm the exact package marking and datasheet revision to ensure compatibility with design specifications. Cross-reference the electrical parameters against the official product documentation provided by the authorized distributor to validate performance characteristics before integration.
Select this component for designs prioritizing low noise figure and moderate power output in the L-to-S band range. The 2V bias requirement and 10mA current draw offer efficient power management compared to higher voltage alternatives. Ensure the PCB layout supports the M04 package dimensions and thermal requirements for reliable operation up to the specified temperature limits.
This part belongs to the family of low noise FETs and ICs from CEL, which are known for delivering exceptional noise performance even beyond 20GHz. The NE3509 series specifically targets applications requiring high gain and low noise in compact packages, serving as a critical active element in RF signal chains.
Public confirmed substitute part numbers are not available in the provided documentation.