NE3510M04-07-T2-A

Overview

The NE3510M04-07-T2-A is an RF small signal field-effect transistor manufactured by Renesas Electronics Corporation. It is a single-element, N-channel hetero-junction FET designed for S-band applications. The device operates in depletion mode and features a lead-free Super Minimold M04 package with four pins. Key electrical parameters include a minimum drain-source breakdown voltage of 3 V and a maximum drain current of 0.03 A. The component utilizes silicon technology and connects the case to the drain terminal.

Feature Summary

• Hetero-junction FET technology optimized for low noise amplification
• Designed specifically for S-band frequency operations
• Lead-free construction compliant with environmental standards

Applications

• Low noise amplifier circuits in S-band systems
• RF signal processing components
• Microwave communication equipment

Procurement Notes

Verify the manufacturer designation as Renesas Electronics Corporation or NEC depending on the specific production lot. Confirm the package type is the Super Minimold M04 variant. Ensure the part number suffix matches the exact ordering code required for the intended design implementation.

Selection Notes

Select this component for S-band applications requiring a depletion mode N-channel FET. Verify that the 3 V minimum breakdown voltage and 0.03 A maximum current ratings meet the circuit requirements. Check compatibility with the Super Minimold M04 footprint during PCB layout.

Part Context

This component belongs to the NE3510 series of RF transistors. It shares the same core device structure as the NE3510M04-T2-A but may differ in packaging or manufacturing origin details. The series is characterized by its use in low-noise amplification tasks within the microwave spectrum.

Replacement Considerations

The NE3510M04-T2-A is a confirmed substitute part number. Verify pinout compatibility and thermal characteristics before substitution.