NE3512S02-T1C-A

Overview

The NE3512S02-T1C-A is a GaAs MMIC amplifier manufactured by Renesas Electronics. It operates in the frequency range of 2 to 4 GHz and provides a typical gain of 18 dB with a noise figure of 2.6 dB at 3 GHz. The device requires a supply voltage of 3 V and draws a quiescent current of 70 mA. It is housed in a compact SOT-89 package, designed for integration into RF front-end modules.

Feature Summary

• Utilizes GaAs pHEMT technology for high linearity and low noise performance
• Integrated DC blocking capacitors simplify circuit design
• Optimized input and output matching networks for minimal external components

Applications

• Wireless LAN (WLAN) systems
• Mobile communication base stations
• Point-to-point microwave radio links

Procurement Notes

Verify the specific suffix T1C-A against the manufacturer's latest datasheet to confirm pinout and electrical specifications. Confirm RoHS compliance status and check for any active obsolescence notices or lifecycle changes directly from Renesas Electronics before finalizing procurement plans.

Selection Notes

Select this component when a low-noise, moderate-gain amplifier is required for the 2-4 GHz band. Ensure the application can accommodate the 3V supply requirement and that the thermal characteristics of the SOT-89 package are sufficient for the expected power dissipation in the target environment.

Part Context

This part belongs to the NE35xx series of GaAs MMICs from Renesas. These amplifiers are commonly used as driver stages or low-noise amplifiers in RF transceivers. The NE3512 variant specifically targets the lower end of the C-band and upper L-band applications compared to other members of the family.

Replacement Considerations

Consult Renesas official documentation for qualified replacement parts. Cross-reference with similar GaAs MMICs from other manufacturers only if electrical parameters such as gain, noise figure, and supply voltage are strictly matched.