NE3513M04-T2B-A

Overview

The NE3513M04-T2B-A is an N-Channel GaAs Heterojunction Field-Effect Transistor (HJ-FET) designed for X to Ku band applications. It operates with a rated drain-to-source voltage of 4.0V and a gate-to-source voltage of -3.0V. The device delivers 125mW of output power at a test voltage of 2V, providing 13dB gain at 12GHz. It features a maximum drain current (IDSS) of 10mA and is housed in a 4-Super Mini Mold package.

Feature Summary

• N-Channel GaAs HJ-FET construction optimized for low noise and high-gain performance
• Operates effectively across X to Ku frequency bands
• Compact 4-Super Mini Mold surface-mount packaging

Applications

• Low noise amplifier circuits
• High-gain RF amplifier stages
• X-band communication systems
• Ku-band signal processing modules

Procurement Notes

This component is classified as a discontinued product or subject to discontinuation notice by Renesas Electronics. Support is restricted to customers who have already adopted these products into their designs. Verify end-of-life status and availability constraints before finalizing procurement plans.

Selection Notes

Select this component for X to Ku band applications requiring specific GaAs HJ-FET characteristics. Ensure design compatibility with the 4.0V drain-to-source voltage rating and 125mW output power capability. Confirm that the 4-Super Mini Mold package dimensions fit the target PCB layout requirements.

Part Context

The NE3513M04 series represents Renesas' GaAs HJ-FET technology for microwave frequencies. The T2B-A suffix indicates the specific Super Mini Mold package variant. This family targets RF front-end modules where low noise figure and stable gain are critical for signal integrity in wireless communications.

Replacement Considerations

Public confirmed substitute part numbers are not available. As a discontinued item, direct replacements may require design modifications to accommodate different electrical parameters or package footprints.