NE3515S02-T1C-A

Overview

The NE3515S02-T1C-A is a pseudomorphic high-electron-mobility transistor (pHEMT) fabricated using gallium arsenide technology. It operates at frequencies up to 12 GHz with a gain of 12.5 dB and a noise figure of 0.3 dB. The device features a drain-source breakdown voltage of 4 V, a gate-source breakdown voltage of -3 V, and a continuous drain current of 88 mA. Maximum power dissipation is 165 mW, and the maximum operating temperature reaches +125 C. It is housed in an S0-2 surface-mount package.

Feature Summary

• Super low noise performance suitable for sensitive RF front-end applications
• High linearity indicated by a 14 dBm P1dB compression point
• GaAs pHEMT construction for efficient microwave operation

Applications

• Low noise amplifier stages in wireless communication systems
• RF signal processing circuits requiring minimal noise addition
• Microwave receiver front-ends operating up to 12 GHz

Procurement Notes

Verify component authenticity through authorized channels as this part is listed as end-of-life. Confirm RoHS compliance details via official documentation before integration. Check for obsolescence notices from CEL regarding supply continuity or recommended design changes. Ensure storage conditions meet semiconductor handling standards to prevent degradation.

Selection Notes

Select this component when ultra-low noise figures are critical for system sensitivity. The 12.5 dB gain supports direct amplification needs without additional stages. Verify that the 4 V drain-source breakdown voltage aligns with the target circuit biasing requirements. Consider the S0-2 package constraints for PCB layout and thermal management during the design phase.

Part Context

This device belongs to the NE3515 series of RF JFET transistors manufactured by CEL. It utilizes pseudomorphic HEMT technology on a GaAs substrate to achieve superior noise and gain characteristics compared to standard MESFETs. The S0-2 package provides a compact form factor for dense microwave circuit designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.