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The NE3517S03-T1C-A is an N-channel GaAs HJ-FET designed for K-band super low noise amplifier applications. It operates up to 20GHz with a typical noise figure of 0.65dB and a gain of 13.5dB. The device features a test current of 10mA and a voltage rating of 4V. Packaged in the S03 surface-mount format, it supports cut tape and reel configurations. This component is manufactured by CEL (California Eastern Laboratories) using silicon-based technology processes adapted for RF performance.
Verify the specific ordering suffix and package variant against official datasheets before procurement. Confirm that the S03 package matches your PCB footprint requirements. Check for end-of-life status or product change notices from the manufacturer. Ensure compatibility with your assembly process for cut tape or reel handling. Validate technical specifications directly with the supplier to avoid discrepancies.
Select this component when designing amplifiers for K-band frequencies requiring ultra-low noise figures. Consider the S03 package size for space-constrained layouts. Evaluate the 10mA test current and 4V rating against your biasing network capabilities. Compare gain characteristics with alternative transistors if higher amplification is needed. Ensure thermal management strategies align with the device's power dissipation limits.
This part belongs to the NE35xx series of RF transistors from CEL, specialized for microwave applications. It shares design principles with other models like the NE3513M04-T2B-A but differs in package and specific electrical targets. The series focuses on providing reliable performance for satellite communications and radar systems where noise performance is critical.
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult official replacement guides or contact the manufacturer for direct equivalents.