NE3520S03-A

Overview

The NE3520S03 is an N-channel GaAs Heterojunction Field-Effect Transistor (HJ-FET) designed for K-band applications. It operates with a drain-to-source voltage of up to 4.0 V and a gate-to-source voltage of -3.0 V. At 20 GHz, it provides a typical noise figure of 0.65 dB and an associated gain of 13.5 dB when biased at VDS = 2 V and ID = 10 mA. The device features a saturated drain current range of 25 to 70 mA and a transconductance of 50 to 65 mS. Total power dissipation is rated at 165 mW, with a maximum channel temperature of +125 °C.

Feature Summary

• Low noise figure and high associated gain optimized for K-band frequencies
• Micro-X plastic S03 package construction
• Gallium arsenide heterojunction field-effect transistor technology

Applications

• 20 GHz band DBS LNB
• K band communication systems

Procurement Notes

Verify the specific ordering suffix required for tape-and-reel quantity, as the base part number corresponds to sample quantities. Confirm that the CE3520K3 is accepted as a drop-in replacement if the NE3520S03 is discontinued. Ensure handling procedures account for electrostatic discharge sensitivity inherent to GaAs devices.

Selection Notes

Select this component for designs requiring low noise performance in the K-band spectrum. Verify biasing conditions align with the recommended operating range of VDS between +1 V and +3 V. Consider the thermal constraints imposed by the 165 mW power dissipation limit and ensure the PCB layout matches the specified RF measuring pattern for accurate impedance matching.

Part Context

This device belongs to the family of Gallium Arsenide HJ-FETs developed for microwave frequency operations. Manufactured originally by California Eastern Laboratories (CEL), it represents a specialized semiconductor solution for low-noise amplification in satellite and communication infrastructure. The S03 package facilitates surface-mount integration into compact RF modules.

Replacement Considerations

The datasheet explicitly identifies the CE3520K3 as a drop-in replacement for the NE3520S03.

FAQ

What is the typical noise figure at 20 GHz?

The typical noise figure is 0.65 dB when biased at VDS = 2 V and ID = 10 mA.

What are the absolute maximum ratings for voltages?

The absolute maximum Drain-to-Source Voltage is 4.0 V, and the Gate-to-Source Voltage is -3.0 V.

Is this component discontinued?

Yes, the datasheet marks the NE3520S03 as discontinued.