NE3521M04-A

NE3521M04-A

  • Description:RF MOSFET GAAS HJ-FET 2V
  • Series:-

SKU:35c418c4e5d0 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET GAAS HJ-FET 2V
  • Series:-
  • Mfr:CEL
  • Package:Strip
  • Technology:GaAs HJ-FET
  • Frequency:20GHz
  • Gain:10.5dB
  • Voltage - Test:2 V
  • Current Rating (Amps):15mA
  • Noise Figure:0.85dB
  • Current - Test:6 mA
  • Power - Output:-
  • Voltage - Rated:3 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:4-SMD, Flat Leads
  • Supplier Device Package:-
  • Configuration:N-Channel

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NE3521M04-A

Overview

The NE3521M04-A is an N-Channel GaAs Heterojunction Field-Effect Transistor (HJ-FET) designed for K-band applications. It features a dual mold plastic package and operates with a drain-to-source voltage of 4.0 V and a gate-to-source voltage of -3.0 V. The device is characterized by low noise performance and high gain, making it suitable for RF front-end modules in wireless communication systems.

Feature Summary

  • N-Channel GaAs HJ-FET technology
  • K-band low noise and high-gain characteristics
  • Dual mold plastic package construction

Applications

  • RF front-end modules
  • Wireless communication systems
  • Low noise amplifier designs

Procurement Notes

Verify the specific ordering suffix against official Renesas or CEL documentation to ensure correct package type and tape/reel configuration. Confirm RoHS compliance status and lead-free requirements prior to procurement. Cross-reference the full part number with the manufacturer's current datasheet to validate availability and electrical specifications.

Selection Notes

Select this component for K-band applications requiring low noise figure and high gain in a compact plastic package. Ensure the design accommodates the 4.0 V drain-to-source voltage limit. Evaluate thermal management requirements for the dual mold plastic package in the target application environment.

Part Context

This component belongs to the NE3521 series of GaAs HJ-FETs from California Eastern Laboratories (CEL), now part of Renesas Electronics. The series is engineered for high-frequency RF applications, providing reliable performance in microwave and millimeter-wave circuits.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official substitution guide for verified alternatives.

NE3521M04-ANE3521M04-A

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