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The NE3521M04-A is an N-Channel GaAs Heterojunction Field-Effect Transistor (HJ-FET) designed for K-band applications. It features a dual mold plastic package and operates with a drain-to-source voltage of 4.0 V and a gate-to-source voltage of -3.0 V. The device is characterized by low noise performance and high gain, making it suitable for RF front-end modules in wireless communication systems.
Verify the specific ordering suffix against official Renesas or CEL documentation to ensure correct package type and tape/reel configuration. Confirm RoHS compliance status and lead-free requirements prior to procurement. Cross-reference the full part number with the manufacturer's current datasheet to validate availability and electrical specifications.
Select this component for K-band applications requiring low noise figure and high gain in a compact plastic package. Ensure the design accommodates the 4.0 V drain-to-source voltage limit. Evaluate thermal management requirements for the dual mold plastic package in the target application environment.
This component belongs to the NE3521 series of GaAs HJ-FETs from California Eastern Laboratories (CEL), now part of Renesas Electronics. The series is engineered for high-frequency RF applications, providing reliable performance in microwave and millimeter-wave circuits.
Public confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's official substitution guide for verified alternatives.