NE4210S01-T1B

Overview

The NE4210S01-T1B is a pseudomorphic Hetero-Junction Field-Effect Transistor (HJFET) manufactured by CEL. It utilizes a junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons, resulting in excellent low noise performance and associated gain. The device operates in the X Band and is designed for RF applications requiring superior signal integrity. Key electrical specifications include a maximum power dissipation of 165 mW and a typical gain of 13 dB. The component supports a maximum operating temperature of +125 C.

Feature Summary

• Utilizes pseudomorphic hetero-junction technology between Si-doped AlGaAs and undoped InGaAs layers to generate very high electron mobility.
• Delivers excellent low noise figure and high associated gain characteristics suitable for sensitive RF front-end stages.
• Engineered specifically for operation within the X Band frequency range.

Applications

• Low noise amplifier (LNA) design for satellite communication systems
• Receiver input stages in radar equipment
• RF signal processing circuits requiring minimal noise degradation

Procurement Notes

Verify current availability status as this component is listed as obsolete and no longer manufactured by the supplier. Confirm compatibility with existing PCB footprints if integrating into legacy designs or replacement projects. Ensure that sourcing channels provide authentic parts from authorized distributors to avoid counterfeit risks associated with end-of-life components.

Selection Notes

Select this component when designing X Band circuits that demand ultra-low noise performance and high gain. Consider its S0-1 surface mount package for compact board layouts. Evaluate thermal management requirements given the 165 mW power dissipation limit and +125 C maximum operating temperature rating to ensure reliable long-term operation in demanding environments.

Part Context

This part belongs to the NE4210 series of RF JFET transistors originally developed by NEC Electronics and later produced by CEL. These devices are recognized for their hetero-junction field-effect technology, which provides distinct advantages over standard silicon FETs in terms of electron mobility and noise performance at microwave frequencies.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Due to the obsolete lifecycle status, direct replacements may require circuit redesign or alternative component selection based on specific electrical parameter matching.