NE46134-T1

Overview

The NE46134-T1 is an NPN silicon epitaxial bipolar transistor designed for medium power RF applications requiring high dynamic range. It features a low-cost surface mount SOT-89 package. Key electrical characteristics include a typical output power of 27.5 dBm, a typical noise figure of 1.5 dB at 500 MHz, and intermodulation distortion of -40 dBc. The device utilizes a titanium, platinum, gold metallization system with direct nitride passivation.

Feature Summary

• High dynamic range performance suitable for linear amplification
• Low intermodulation distortion for signal integrity
• Low noise figure characteristics for sensitive reception stages

Applications

• L Band amplification (1-2 GHz)
• Medium power microwave circuits
• RF front-end modules

Procurement Notes

Verify current availability status as the NE46134-T1 may be obsolete or no longer manufactured by CEL. Confirm if the specific suffix variant is available or if a direct replacement from the manufacturer is required. Check datasheet revisions to ensure compatibility with existing design specifications before procurement.

Selection Notes

Select this component for designs requiring high linearity and moderate power output in the L Band. Ensure the thermal management solution supports the SOT-89 package constraints. Verify that the operating frequency aligns with the specified gain and noise parameters. Consider alternative parts if the original manufacturer has discontinued production.

Part Context

This part belongs to the NE461 series of NPN silicon epitaxial bipolar transistors. The series is engineered for applications demanding high dynamic range and low cost. The technology employs advanced metallization and passivation techniques to enhance reliability and performance in microwave environments.

Replacement Considerations

Public confirmed substitute part numbers include 2SC2714-O(TE85L,F) from Toshiba Semiconductor and Storage. Verify pinout and electrical parameter compatibility when substituting.