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Product Detailed Parameters
- Description：RF TRANS NPN 15V SOT-89
- Series：-
- Mfr：CEL
- Package：Strip
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：1.5dB ~ 2dB @ 500MHz ~ 1GHz
- Gain：8.3dB
- Power - Max：2W
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 50mA, 10V
- Current - Collector (Ic) (Max)：250mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：SOT-89
- Grade：-
- Qualification：-
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Overview
The NE461M02-AZ is a silicon NPN bipolar transistor manufactured by CEL, designed for RF applications up to 6 GHz. It features a transition frequency (fT) of 5.3 GHz and an output noise figure of 2 dB at 1 GHz with a VCE of 10V. The device provides a maximum available gain of 9 dB and a DC current gain (hFE) of 120. Rated for a maximum collector-emitter voltage of 15V and a maximum collector current of 250 mA, it utilizes the M02 package, which corresponds to the SOT-89 surface-mount configuration.
Feature Summary
- Silicon NPN construction optimized for high-frequency signal amplification
- SOT-89 surface-mount package design for compact integration
- High linearity characteristics suitable for low-noise front-end stages
Applications
- Low noise amplifier circuits in wireless communication systems
- RF signal processing within Wi-Fi and Bluetooth modules
- Front-end components for ISM band applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical tolerances and testing conditions. Confirm that the M02 package designation aligns with the required SOT-89 footprint for your PCB layout. Ensure compatibility with standard surface-mount assembly processes.
Selection Notes
Select this component when a silicon NPN transistor is required for frequencies around 1 GHz with moderate power handling. Compare the 15V breakdown voltage and 250mA current limit against circuit requirements. Evaluate the 2.3dB noise figure relative to GaAs alternatives if ultra-low noise is critical for the specific application bandwidth.
Part Context
This part belongs to CEL's portfolio of silicon bipolar transistors intended for RF and microwave markets. It serves as a discrete alternative to integrated MMIC solutions, offering designers flexibility in biasing and impedance matching. The product line supports various wireless connectivity standards requiring reliable amplification.
Replacement Considerations
The NE46134 is listed as a JEITA equivalent part number. Verify pinout compatibility and thermal resistance specifications before substitution. Cross-reference datasheets to ensure the replacement meets the same fT and voltage ratings.
