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The NE461M02-T1-QS-AZ is an NPN silicon RF bipolar transistor manufactured by CEL. It is designed for high-frequency applications up to 6 GHz, offering a noise figure of 2.3 dB. The device utilizes a surface-mount SOT-89 package, facilitating integration into compact radio frequency circuits. Key electrical characteristics include a transition frequency optimized for broadband performance and stable gain across the specified bandwidth. This component serves as a low-noise amplifier or driver stage in wireless communication systems requiring reliable signal integrity at microwave frequencies.
Verify the exact datasheet specifications against the manufacturer's current documentation before finalizing designs. Confirm that the QS-AZ suffix corresponds to the intended packaging and tape-and-reel configuration required for assembly processes. Ensure compatibility with existing thermal management solutions given the SOT-89 form factor.
Select this component when a low noise figure near 2.3 dB is critical at 6 GHz frequencies. Compare its S-parameter data with alternative transistors to ensure gain stability matches system requirements. Consider the SOT-89 package constraints regarding power dissipation and thermal resistance during layout planning.
This part belongs to CEL's NE461 series of NPN silicon RF transistors. These devices are engineered for general-purpose RF amplification where size and noise performance are prioritized. The series typically includes variants with different suffixes indicating packaging or testing variations, all sharing core electrical characteristics suitable for cellular infrastructure and point-to-point links.
Direct substitutes may include other CEL NPN RF transistors from the same family with compatible pinouts. Cross-reference S-parameters and noise figures with competitors like Mini-Circuits or Hittite (now Qorvo) for equivalent 6 GHz performance. Verify package dimensions match the SOT-89 footprint exactly.