NE46234-AZ

NE46234-AZ

  • Description:RF TRANS NPN 12V 6GHZ SOT-89
  • Series:-

SKU:555d1a70d1a3 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 6GHZ SOT-89
  • Series:-
  • Mfr:CEL
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:6GHz
  • Noise Figure (dB Typ @ f):2.3dB @ 1GHz
  • Gain:8.3dB
  • Power - Max:1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 50mA, 5V
  • Current - Collector (Ic) (Max):150mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:SOT-89
  • Grade:-
  • Qualification:-

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NE46234-AZ

Overview

The NE46234-AZ is an NPN epitaxial silicon RF transistor designed for low distortion and low noise amplification at low supply voltages. It operates with a collector-emitter voltage of 5 V and features a 3-pin Power Minimold (SOT-89) package. Key electrical parameters include a gain bandwidth product (fT) of 6.0 GHz, a typical insertion power gain of 8.3 dB at 1 GHz, and a noise figure of 2.3 dB. The device supports a total power dissipation of 1.8 W on a specified ceramic substrate, with absolute maximum ratings of 25 V collector-to-base voltage and 150 mA collector current.

Feature Summary

  • Engineered for high-frequency applications requiring low distortion and low noise performance.
  • Optimized for operation with low supply voltages, specifically 5 V.
  • Utilizes a compact 3-pin surface mount Power Minimold plastic package.

Applications

  • Low distortion RF amplifiers
  • CATV systems
  • Telecommunication equipment

Procurement Notes

Verify the specific ordering suffix to confirm the supplying form. The NE46234-AZ variant is supplied in non-reel quantities of 25 pieces using 12 mm wide embossed taping. Confirm that the component matches the required hFE classification rank for the intended circuit design before finalizing procurement.

Selection Notes

Select this component for circuits requiring an NPN RF transistor with a 6.0 GHz gain bandwidth product and low intermodulation distortion. Ensure the design accommodates the SOT-89 package dimensions and provides adequate thermal management for the 1.8 W power dissipation rating when mounted on a double-sided copper-clad ceramic substrate.

Part Context

This part is functionally equivalent to the 2SC4703. Both identifiers refer to the same NPN epitaxial silicon RF transistor manufactured by CEL. The datasheet lists them together, indicating they share identical specifications, pinouts, and physical characteristics within the Power Minimold package.

Replacement Considerations

The 2SC4703 is the direct equivalent part number for the NE46234-AZ. They are listed as interchangeable in the manufacturer's documentation. No other substitutes are confirmed in the provided source material.

FAQ

What is the typical second-order intermodulation distortion (IM2) at 5 V?

The typical IM2 is 55 dBc when operating at VCE = 5 V, IC = 50 mA, and VO = 105 dBμV/75Ω.

What is the maximum collector current rating?

The absolute maximum collector current (IC) is rated at 150 mA at an ambient temperature of +25°C.

How is the DC current gain (hFE) classified?

The hFE is classified into three ranks: SH (50 to 100), SF (80 to 160), and SE (125 to 250) under test conditions of VCE = 5 V and IC = 50 mA.

NE46234-AZNE46234-AZ

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