NE46234-SE-AZ

Description：RF TRANS NPN 12V 6GHZ SOT-89
Series：-

SKU:32f26f6d9adc Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 6GHZ SOT-89
Series：-
Mfr：CEL
Package：Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：6GHz
Noise Figure (dB Typ @ f)：2.3dB @ 1GHz
Gain：8.3dB
Power - Max：1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce：125 @ 50mA, 5V
Current - Collector (Ic) (Max)：150mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Grade：-
Qualification：-

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NE46234-SE-AZ

Overview

The NE46234-SE-AZ is an NPN epitaxial silicon RF transistor designed for low distortion and low noise amplifier applications operating at a low supply voltage of 5 V. It features a 3-pin Power Minimold (SOT-89) package with a total power dissipation of 1.8 W on a specified ceramic substrate. Key electrical parameters include a collector-to-emitter voltage (VCEO) of 12 V, a collector current (IC) of 150 mA, and a gain bandwidth product (fT) of 6.0 GHz. The device exhibits typical intermodulation distortion values of IM2 = 55 dBc and IM3 = 76 dBc at VCE = 5 V and IC = 50 mA.

Feature Summary

Optimized for low distortion and low noise performance in high-frequency amplifier circuits
Capable of operation with low supply voltage (VCE = 5 V)
Utilizes a compact 3-pin Power Minimold surface mount package

Applications

CATV systems
Telecommunication equipment
Low distortion RF amplifiers

Procurement Notes

Verify the specific hFE binning classification required for the design, as the SE suffix indicates a DC current gain range of 125 to 250. Confirm that the ordering information matches the requested quantity format, such as non-reel taping or reel quantities, to ensure compatibility with assembly processes.

Selection Notes

Select this component when designing RF amplifiers requiring low intermodulation distortion at low supply voltages. Ensure the thermal management strategy supports the 1.8 W power dissipation rating using a double-sided copper-clad ceramic substrate. Verify that the 12 V VCEO rating meets the circuit's maximum voltage requirements.

Part Context

This part is functionally equivalent to the NEC 2SC4703. It belongs to a family of NPN silicon RF transistors intended for high-frequency applications. The manufacturer provides multiple hFE ranking options, including SH, SF, and SE, to accommodate different gain requirements within the same physical package and electrical specification framework.