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The NE46234-T1-AZ is an NPN epitaxial silicon RF transistor designed for low distortion and low noise amplifier applications operating at a low supply voltage of VCE = 5 V. It features a 3-pin Power Minimold (SOT-89) surface mount package. Key electrical parameters include a collector-to-emitter voltage (VCEO) of 12 V, a collector current (IC) of 150 mA, and a total power dissipation (Ptot) of 1.8 W on a specified ceramic substrate. The device exhibits a gain bandwidth product (fT) of 6.0 GHz, an insertion power gain of 8.3 dB at 1 GHz, and a typical noise figure of 2.3 dB.
Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. The -T1 designation indicates reel supply form, while -AZ may denote specific manufacturing lot or regional compliance variations. Confirm exact quantity per reel and tape orientation requirements before finalizing procurement orders.
Select this component when designing RF front-ends requiring low second and third-order intermodulation distortion at 5 V supply. Ensure thermal management meets the 1.8 W dissipation requirement using a double-sided copper-clad ceramic substrate. Check hFE classification ranks if DC gain consistency is critical for the specific amplifier topology.
This part belongs to the NEC/NE46234 series of NPN silicon RF transistors. It shares functional characteristics with the 2SC4703 equivalent. The device is engineered specifically for broadband RF applications where linearity and noise performance are prioritized over high-power output capabilities.
The 2SC4703 is a direct functional equivalent. Verify pinout compatibility and thermal resistance specifications when substituting. Ensure the replacement device supports the required SOT-89 footprint and meets the same RF performance metrics for gain and distortion.