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Product Detailed Parameters
- Description：RF TRANS NPN 5V SOT-343
- Series：-
- Mfr：CEL
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：5V
- Frequency - Transition：-
- Noise Figure (dB Typ @ f)：1dB ~ 1.5dB @ 2GHz
- Gain：14dB ~ 16dB
- Power - Max：150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 3mA, 2V
- Current - Collector (Ic) (Max)：40mA
- Operating Temperature：125°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：SOT-343
- Grade：-
- Qualification：-
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Overview
The NE52418-T1-A is an NPN GaAs HBT (InGaP) low noise amplifier manufactured by CEL. It operates in the L/S band and is housed in a 4-pin Super Mini Mold package designed for high-density applications. Key electrical characteristics include a typical associated gain of 16 dB, a noise figure of 1.0 dB at 2 GHz with VCE = 2 V and IC = 3 mA, and an output third-order intercept point (OIP3) of +25 dBm at 2 GHz with IC = 10 mA. The device supports a maximum collector current of 40 mA and total power dissipation of 150 mW.
Feature Summary
- High power gain suitable for front-end low noise amplifiers
- Low noise figure optimized for L/S band mobile communications
- Grounded emitter transistor configuration
- Compact 4-pin Super Mini Mold package
Applications
- Front-end Low Noise Amplifiers (LNA)
- L-band mobile communications systems
- S-band mobile communications systems
Procurement Notes
Verify that the ordering suffix -T1-A corresponds to the specified tape and reel packaging format containing 3 K pieces per reel. Confirm compliance with RoHS directives and ensure the component meets specific environmental standards required for the target application before finalizing procurement.
Selection Notes
Select this component for designs requiring high gain and low noise in the L/S band. Ensure biasing conditions align with recommended operating parameters, specifically maintaining VCE between 1.5 V and 3.0 V. Consider the grounded emitter topology and package dimensions when designing the PCB layout for optimal RF performance.
Part Context
This part is produced by California Eastern Laboratories (CEL), which serves as a business partner of NEC Compound Semiconductor Devices, Ltd. The NE52418 series utilizes GaAs HBT technology to deliver reliable performance for RF applications. The manufacturer provides detailed S-parameter data and nonlinear model parameters for circuit simulation.
Replacement Considerations
No direct public substitute part numbers are documented in the provided datasheet. Verify compatibility with existing circuit designs if considering alternative components from other manufacturers.
FAQ
What does the -A suffix indicate on the NE52418-T1-A?
The -A suffix indicates that the device is lead-free and compliant with EU RoHS directives.
What is the typical noise figure of the NE52418?
The typical noise figure is 1.0 dB at 2 GHz under VCE = 2 V, IC = 3 mA, and ZS = ZL = 50 Ω conditions.
How is the NE52418 packaged?
It is housed in a 4-pin Super Mini Mold package, ideal for high-density design.
