NE5531079A-A

Overview

The NE5531079A-A is an RF Power LD-MOSFET designed for high-frequency applications. It operates at a test frequency of 460 MHz with a supply voltage of 7.5 V and a quiescent current of 200 mA. The device delivers a typical output power of +40.0 dBm and provides a linear gain of 20.5 dB under a +25 dBm input condition.

Feature Summary

• Utilizes Silicon LDMOS technology for robust RF power amplification
• Engineered for ultra-high frequency band operations
• Features a lead-free plastic surface-mount package

Applications

• Ultra High Frequency Band RF Power Amplifiers
• Wireless Communication Systems
• RF Front-End Components

Procurement Notes

Verify the manufacturer origin, as this part number appears in catalogs from CEL, Renesas, and NEC. Confirm that the specific datasheet matches the required electrical characteristics and package dimensions before integration into the design.

Selection Notes

Select this component for designs requiring high linearity and output power at 460 MHz. Ensure the thermal management solution supports the dissipation requirements associated with a 7.5 V supply and 200 mA bias current in the specified plastic SMD package.

Part Context

This component belongs to the Silicon MOSFET Devices category within the RF Power LD-MOSFETs segment. It is listed alongside other discrete silicon transistors intended for wireless connectivity and ISM band applications by California Eastern Laboratories (CEL).

Replacement Considerations

Datasheets list the NE5531079A-A as a direct equivalent to the NEC part number NE5531079A.